Entering MIL-HDBK-217 Microwave Power Transistors
The following table describes the part parameters required for the Microwave Power Transistor subcategory of semiconductors when a MIL-HDBK-217 model is selected for the calculation.
Parameter
Type
Description
Quality Level
Choice List
The quality screening level used in the manufacturing of the device. Choices are:
JANTXV
JANTX
JAN
Commercial
Application
Choice List
The application of the device in the circuit. Choices are:
CW (Continuous Wave)
Pulsed
Metallization
Choice List
The metallization type for the device. Choices are:
Aluminum
Gold
Internal Matching
Choice List
The internal matching of the device. Choices are:
Both Input and Output
Input Only or Output Only
No Matching
[Voltage Parameters]
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For more information, see Voltage Parameters.
Average Output Power
Real (Watts)
The average output power of the device. This is the power level for the overall packaged device and not the individual components within the device.
Frequency (GHz)
Real (GHz)
The operating frequency of the device.
Duty Cycle
Real
Required only when Pulsed is selected for the application.
The percentage of time that the device is in an operational (on) state.
[Temperature Parameters]
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For more information, see Comprehensive Temperature Parameters.
[Derating Parameters]
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For more information, see Derating Parameters.