Entering 299B Microwave Power Transistors
The following table describes the part parameters required for the Microwave Power Transistor subcategory when 299B is the selected calculation model.
Parameter
Type
Description
Quality Level
Choice List [Parts Count also]
The appropriate quality screening level of the device. Accepted quality levels and values for this subcategory follow.
A1 = 0.03
A2 = 0.05
A3 = 0.10
A4 = 0.20
B1 = 0.50
B2 = 1.00
C = 5.0
Application Status
Choice List
The application of the device in the circuit. Choices are:
Continuous Wave
Pulsed
Metallization
Choice List
The metallization type for the device. Choices are:
Aluminum
Gold
Internal Matching
Choice List
The internal matching of the device. Choices are:
Both Input and Output
Input Only or Output Only
No Matching
Emission Pole Ballast
Choice List
The strength of the emission pole ballast. Choices are:
Mid
None
Strong
Weak
Duty Cycle
Real
The percentage of time that the device is in an operational (on) state.
Average Output Power
Real (Watts)
The average output power of the device. Refers to the power level for the overall packaged device and not to the individual components within the device.
Frequency
Real (GHz)
The operating frequency of the device in gigahertz.
[Voltage Parameters]
---
For more information, see Voltage Parameters.
[Temperature Parameters]
---
For more information, see Comprehensive Temperature Parameters.
[Derating Parameters]
---
For more information, see Derating Parameters.