Entering 299B GaAs FET Transistors
The following table describes the part parameters required for the GaAs FET subcategory when 299B is the selected calculation model.
Parameter
Type
Description
Quality Level
Choice List [Parts Count also]
The appropriate quality screening level of the device. Accepted quality levels and values for this subcategory follow.
A1 = 0.03
A2 = 0.05
A3 = 0.10
A4 = 0.20
B1 = 0.50
B2 = 1.00
C = 5.00
Two Sided
Checkbox [Parts Count also]
When selected, the device is two-sided. Data entry fields for the second side become available. The fields for side 2 apply only to side 2. The thermal resistance and minimum temperature rating values for side 2 are assumed to be the same as the values for side 1.
Application
Choice List
The application of the device in the circuit. Choices are:
CW (Continuous Wave)
Low Power or Pulsed
Internal Matching
Choice List
The internal matching of the transistor. Choices are:
Both Input and Output
Input Only or Output Only
No Matching
Average Output Power
Real (Watts)
The average output power of the device. Refers to the power level for the overall packaged device and not to the individual components within the device.
Frequency
Real (GHz)
The operating frequency of the device in gigahertz.
[Temperature Parameters
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For more information, see Comprehensive Temperature Parameters.
[Derating Parameters]
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For more information, see Derating Parameters.