Parameter
|
Type
|
Description
|
---|---|---|
Type
|
Choice List [Parts Count also]
|
Required only for the following subcategories: EEPROM and Memory.
The type of device. Choices vary by subcategory. If the type is unknown for the EEPROM subcategory, select Flotox.
|
Error Correction
|
Choice List
|
Required only for the EEPROM subcategory when Flotex or Textured-Poly is the type.
The error correction code of the device. Choices are:
• None — When selected, there is no on-chip error correction code or the code is unknown.
• Hamming Code — When selected, an on-chip hamming code is present.
• Redundant Cell — When selected, the two-needs-one redundant cell approach is in use.
|
Programming Cycles
|
Integer
|
Required only for the EEPROM subcategory when Flotex or Textured-Poly is the type.
The total number of programming cycles over the life of the device.
|
System Lifetime (Hrs)
|
Integer
|
Required only for the EEPROM subcategory when Flotex or Textured-Poly is the type.
The total programming system lifetime in hours.
|
Technology Type
|
Choice List [Parts Count also]
|
Not required for the following subcategories: EEPROM and Linear.
The technology type of the device. Choices vary by subcategory.
|
Quality Level
|
Choice List
|
The quality screening level used in the manufacturing of the device. Choices are:
• S
• B
• B-1
• Commercial
If the device is screened to custom or intermediate programs, you can enter a Pi Q value directly in Pi Q Value. For more information, see MIL-HBDK-217 Quality Levels.
|
# of Gates
|
Integer [Parts Count also]
|
Required only for the following subcategories: Logic, CGA or ASIC and PAL, PLA.
The number of active gates in the package. You can determine the gate count from the logic diagram. A J-K or R-S flip flop is equivalent to 6 gates when used as part of an LSI circuit. A gate is considered to be any one of the following functions: AND, OR, exclusive OR, NAND, NOR, and inverter. When a logic diagram is not available, use a device transistor count to determine gate count using the following equations:
• Bipolar: Gates = # of Transistors / 3
• CMOS: Gates = # of Transistors / 4
• All other MOS: Gates = # of Transistors / 3
|
# of Transistors
|
Integer [Parts Count also]
|
Required only for the Linear subcategory.
The number of active transistors in the package. You can determine the transistor count from the logic diagram.
|
# of Bits
|
Integer [Parts Count also]
|
Required only for the following subcategories: EEPROM and Memory.
The number of bits in the memory device. This parameter is used in conjunction with Units to enter the memory device bits.
|
Units
|
Choice List [Parts Count also]
|
Required only for the following subcategories: EEPROM and Memory.
The units for the value in # of Bits. Choices are:
• b (bits)
• Kb (1024 bits)
• Mb (1,048,576 bits)
• Gb (1,073,741,824 bits)
The default is Kb. However, you can enter the unit in many ways. For example, for a 1-kilobit memory chip, you can enter a 1 for # of Bits and select Kb for Units, or you can enter 1024 for # of Bits and select b for Units.
|
Word Size
|
Choice List [Parts Count also]
|
Required only for the Microprocessor subcategory.
The length of the data word used by the microprocessor. Choices are:
• 8 Bits
• 16 Bits
• 32 Bits
|
Pins
|
Integer
|
The number of active pins in the package.
|
Package Type
|
Choice List
|
Indicates how the device is packaged. Choices are:
• Can
• DIP, Glass Seal
• Flatpack
• Hermetic: DIPs, PGA, SMT
• Nonhermetic: DIPs, PGA, SMT
|
Years in Production
|
Choice List [Parts Count also]
|
The number of years the device has been in production. Choices are:
• >=2.0
• 1.5
• 1.0
• 0.5
• <=0.1
|
[Temperature Parameters]
|
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For more information, see Comprehensive Temperature Parameters.
|
[Derating Parameters]
|
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For more information, see Derating Parameters.
|