Entering PRISM Semiconductors
The following table describes the part parameters required for semiconductors when PRISM is the selected calculation model. This model supports all but the following subcategories of semiconductors:
Alphanumeric Display
HBT
Microwave Power Transistor
Parameter
Type
Description
Year of Manufacture
Integer
The four-digit year in which the device was manufactured (such as 1998 or 2004). The default is the current year.
Type
Choice List
Required only for the following subcategories: Diode, Microwave Diode, Thyristor, and Transistor.
The type of device. Choices vary by subcategory.
Mixer/Detector
Checkbox
Required only for the Microwave Diode subcategory for the Tunnel, Back diode type.
When selected, the device is a mixer or detector type.
Matched Pair, Dual
Checkbox
Required only for the Si FET subcategory.
When selected, the device is a dual matched pair.
[Voltage Parameters]
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For more information, see Voltage Parameters.
Rated Power
Real (Watts)
Required only for the General subcategory for the Varistor (PRISM only) diode type.
The rated power of the device.
Junction Temp Override
Real (Degrees C)
For a PRISM part, this is the only temperature field available. If you enter a value for this parameter, this value is used for failure rate calculations in place of the PRISM temperature calculation. For more information, see PRISM Quality Levels.