Entering MIL-HDBK-217 General Transistors
The following table describes the part parameters required for general transistors when a MIL-HDBK-217 model is selected for the calculation. The subcategories for general transistors are:
Microwave Transistor
Si FET
Transistor
Unijunction Transistor
Parameter
Type
Description
Quality Level
Choice List
The quality screening level used in the manufacturing of the device. Choices vary based on subcategory.
Two Sided
Checkbox
Required only for the following subcategories: Si FET and Transistor.
When selected, the device is two-sided. Data entry fields for the second side become available. The fields for side 2 apply only to side 2. The thermal resistance and maximum rated temperature values for side 2 are assumed to be the same as the values for side 1.
Application
Choice List
Required only for the following subcategories: Si FET and Transistor.
The application of the device in the circuit. Choices vary by subcategory.
[Voltage Parameters]
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Not required for the following subcategories: Si FET and Unijunction.
For more information, see Voltage Parameters.
Power Rating
Real (Watts)
The rated power of the entire device.
Type
Choice List
Required only for the Si FET subcategory.
The type of Si FET. Choices are:
JFET
MOSFET
[Temperature Parameters]
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For more information, see Comprehensive Temperature Parameters.
[Derating Parameters]
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For more information, see Derating Parameters.