Entering MIL-HDBK-217 GaAS FET Transistors
The following table describes the part parameters required for the GaAs FET subcategory of semiconductors when a MIL-HDBK-217 model is selected for the calculation.
Parameter
Type
Description
Quality Level
Choice List
The quality screening level used in the manufacturing of the device. Choices are:
JANTXV
JANTX
JAN
Commercial
Two Sided
Checkbox
When selected, the device is two-sided. Data entry fields for the second side become available. The fields for side 2 apply only to side 2. The thermal resistance value for side 2 is assumed to be the same as the values for side 1.
Application
Choice List
The application of the device in the circuit. Choices are:
CW (Continuous Wave)
Low Power or Pulsed
Internal Matching
Choice List
The internal matching of the device. Choices are:
Both Input and Output
Input Only or Output Only
No Matching
Average Output Power
Real (Watts)
The average output power of the device. This is the power level for the overall packaged device and not the individual components within the device.
Frequency (GHz)
Real (GHz)
The operating frequency of the device.
[Temperature Parameters}
Real (Degrees C)
For more information, see Comprehensive Temperature Parameters.
[Derating Parameters]
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For more information, see Derating Parameters.