|
Parameter
|
Type
|
Description
|
|---|---|---|
|
Package Type
|
Choice List
|
The type of package. The package type determines the failure rate equation to use. If the package type is unknown, you enter the base failure rate to use for Lambda B value.
|
|
Lambda B value
|
Real
|
The base failure rate to use if the package type is unknown.
|
|
Electrical Environment
|
Choice List
|
The general environment in which the device is used.
|
|
Construction
|
Choice List
|
The contact construction of the device. Choices are:
• Bipolar
• MOS, FET, IGBT
|
|
Material
|
Choice List
|
The material from which the device is constructed. Choices are:
• Gallium Arsenide (GaAs)
• Silicon
|
|
DS Operating Voltage
|
Real (Volts)
|
For the Low Power Transistors subcategory, required only when the type is DS (Drain-Source).
For the Power Transistors subcategory, required only when the type is CE (Collector-Emitter) or DS (Drain-Source).
The operating voltage for the device.
|
|
Breakdown Voltage
|
Real (Volts)
|
For the Low Power Transistors subcategory, required only when the type is DS (Drain-Source).
For the Power Transistors subcategory, required only when the type is CE (Collector-Emitter) or DS (Drain-Source).
The minimum specified breakdown voltage of the device.
|
|
GS Oper. Voltage
|
Real (Volts)
|
Required only when the type is GS (Gate-Source) for MOS or FET construction types.
The operating voltage for the device.
|
|
Rated Voltage
|
Real (Volts)
|
Required only when the type is GS (Gate-Source) for MOS or FET construction types.
The rated voltage of the device.
|
|
[Temperature Parameters]
|
---
|
For more information, see Comprehensive Temperature Parameters.
|
|
[Derating Parameters]
|
---
|
For more information, see Derating Parameters.
|